Coherent Transport of Hole and Coulomb Blockade Phenomenon in Long p-Type Semiconductor Carbon Nanotube

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概要

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• We have succeeded in observing the coexistence of the Coulomb charging effect and the coherent transport of the hole in a single-walled carbon nanotube (SWNT) with a length of 4.5 μm at 8.6 K. SWNT channel field-effect transistor (FET) structures were prepared with two different channel lengths of 4.5 and 1.4 μm. The samples showed p-type semiconductor characteristics under large gate and drain biases at 8.6 K. At 8.6 K, on the other hand, single-hole transistor characteristics with different Coulomb charging energies corresponding to the length of the channel were observed in each sample. Drain current peaks with different periods corresponding to the length of the channel were also observed outside of the Coulomb blockade area for the higher drain voltages in each sample. The drain current peaks are attributed to resonant tunneling of the hole through the separation of the quantum energy levels originating from coherent transport of the hole in the entire semiconductive SWNT.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-01-15

著者

• Matsumoto Kazuhiko

  ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

• Kamimura Takafumi

  ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

関連論文

• Nitrogen Doping of Single-Walled Carbon Nanotube by Using Mass-Separated Low-Energy Ion Beams
• Coherent Transport of Hole and Coulomb Blockade Phenomenon in Long p-Type Semiconductor Carbon Nanotube

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