Chromeless Phase Lithography Using Scattering Bars and Zebra Patterns

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概要

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• Resolution enhancement technology refers to a technique that extends the usable resolution of an imaging system without decreasing the wavelength of light or increasing the numerical aperture (NA) of the imaging tool. Off-axis illumination and a phase shift mask (PSM) are essentially accompanied by optical proximity correction (OPC) for most devices nowadays. Chromeless phase lithography (CPL) is one of the PSM technologies. To obtain the best resolution, proper OPC is required with CPL. While the most common application of OPC is to provide mask bias, an additional technique is the use of scattering bars (SBs) and zebra patterns. We compared zebra patterns for 65 nm lines and spaces (L/S) and 45 nm isolated line (I/L) with SBs. To optimize zebra pattern density, we vary the line width and pitch of the zebra patterns. We confirmed that the use of SB and zebra patterns could realize the target linewidth and control necessary for acheiving dense L/S and I/L.

• 2006-11-15

著者

• An Ilsin

  Hanyang Univ. Ansan Kor

• Shin Dong-Soo

  Hanyang University, Ansan 426-791, Korea

• Ahn Chang-Nam

  Toppan Photomask, Icheon 467-746, Korea

• Oh Hye-Keun

  Hanyang University, Ansan 426-791, Korea

• Kang Hye-Young

  Hanyang University, Ansan 426-791, Korea

• Jeong HeeJun

  Hanyang University, Ansan 426-791, Korea

• An Ilsin

  Hanyang University, Ansan 426-791, Korea

関連論文

• Chromeless Phase Lithography Using Scattering Bars and Zebra Patterns
• Investigation of Optimum Biasing and Undercut for Single Trench Alternating Phase Shift Mask in 193 nm Lithography
• Single Anti-Reflection Coating Optimization with Different Polarizations for Hyper Numerical Aperture Immersion Lithography

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