Thermal and Electrical Properties of High-Quality Freestanding GaN Wafers with High Carrier Concentration

概要

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The thermal and electrical properties of high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy were investigated in the high-carrier-concentration region between $1.0\times 10^{18}$ and $1.24\times 10^{19}$ cm-3. The carrier concentration was almost identical to the Si doping concentration. An electrical resistivity as low as 2.5 m$\Omega$ cm was obtained at the carrier concentration $n=1.24\times 10^{19}$ cm-3. The electron mobilities from Hall measurements were 441 and 200 cm2 V-1 s-1 for $n=1.0\times 10^{18}$ and $1.24\times 10^{19}$ cm-3, respectively, which are significantly higher than those reported in the literature. The thermal conductivity measured by the laser flash method was consistently high in the measured carrier concentration range, i.e., about 2.0 W cm-1 K-1 for $n=1.0\times 10^{18}$ cm-3 and 1.87 W cm-1 K-1 for $n=1.24\times 10^{19}$ cm-3.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-10-15