Characterization of Chemical Vapor Deposition Growth Yields of Carbon Nanotube Transistors

スポンサーリンク

概要

• 論文の詳細を見る

• We investigate the dependence of chemical vapor deposition (CVD) growth yield of carbon nanotube (CN) transistors on both the device size and CN formation process. Statistical data shows that high fabrication yields of 90% can be achieved for a chip of CN transistors. Although no special efforts at orientation were made, the CNs connecting the source and drain were generally found to be aligned perpendicularly to the source and drain.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-09-15

著者

• Bokor Jeffrey

  EECS Department, University of California, Berkeley, CA 94720, U.S.A.

• Lin Jun

  EECS Department, University of California, Berkeley, CA 94720, U.S.A.

• Xuan Patrick

  EECS Department, University of California, Berkeley, CA 94720, U.S.A.

関連論文

• Characterization of Chemical Vapor Deposition Growth Yields of Carbon Nanotube Transistors

スポンサーリンク