Laser Interference Lithography with Highly Accurate Interferometric Alignment
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概要
- 論文の詳細を見る
It is shown experimentally that in laser interference lithography, by using a reference grating, respective grating layers can be positioned with high relative accuracy. A 0.001° angular and a few nanometers lateral resolution have been demonstrated.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-09-15
著者
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Lambeck Paul
University of Twente, Mesa+ Research Institute, Integrated Optical MicroSystems Group (IOMS), P.O. Box 217, 7500 AE Enschede, The Netherlands
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Van Soest
University of Twente, Mesa+ Research Institute, Integrated Optical MicroSystems Group (IOMS), P.O. Box 217, 7500 AE Enschede, The Netherlands
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Van Wolferen
University of Twente, Mesa+ Research Institute, Integrated Optical MicroSystems Group (IOMS), P.O. Box 217, 7500 AE Enschede, The Netherlands
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Hoekstra Hugo
University of Twente, Mesa+ Research Institute, Integrated Optical MicroSystems Group (IOMS), P.O. Box 217, 7500 AE Enschede, The Netherlands
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de Ridder
University of Twente, Mesa+ Research Institute, Integrated Optical MicroSystems Group (IOMS), P.O. Box 217, 7500 AE Enschede, The Netherlands
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Wörhoff Kerstin
University of Twente, Mesa+ Research Institute, Integrated Optical MicroSystems Group (IOMS), P.O. Box 217, 7500 AE Enschede, The Netherlands