Analysis of Defect in Extreme UV Lithography Mask Using a Modal Method Based on Nodal B-Spline Expansion

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概要

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• This paper details to an electromagnetic modeling of an extreme ultraviolet (EUV) lithography mask. For that purpose, a modal method based on a spline nodal expansion (MMSNE) is presented. The results obtained using first, and second-order splines as basis functions are compared with those obtained using other modal methods, such as modal method by Fourier expansion (MMFE). The agreement between the results obtained using different methods is very good, and a convergence test is also performed. The spline nodal basis function implemented in this paper is the first step toward the realization of a multiresolution scheme that is expected to perform much more efficiently than conventional schemes.

• 2005-09-15

著者

• Schiavone Patrick

  Laboratoire des Technologies de la Microélectronique CNRS, c/o CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

• Schiavone Patrick

  Laboratoire des Technologies de la Microélectronique, CNRS, c/o CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 09, France

• Edee Kofi

  Laboratoire des Technologies de la Microélectronique, CNRS, c/o CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 09, France

• Granet Gerard

  Laboratoire des Sciences et Matériaux pour l'Electronique et d'Automatisme, CNRS/UMR 6602, Université Blaise Pascal, Les Cézeaux, 63177 Aubière Cedex, France

• Edee Kofi

  Laboratoire des Technologies de la Microélectronique, CNRS, c/o CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 09, France

関連論文

• Analysis of Defect in Extreme UV Lithography Mask Using a Modal Method Based on Nodal B-Spline Expansion
• Rigorous Simulation of Line-Defects in Extreme UV Masks

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