$\pi$ Channel Effects in Transport Properties of Al Nanowires at Finite Biases

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概要

• 論文の詳細を見る

• We present the first-principles investigations on $\pi$ channel effects in electron transport properties of Al monatomic wires. By the eigenchannel decomposition technique, the transport properties are compared between three-atom and five-atom wires, sandwiched between two semi-infinite jellium electrodes. In the presence of finite bias voltages, $\sigma$ channel current shows a linear bias dependence independent of wire length. In contrast, $\pi$ channel current shows nonlinearity in the five-atom wire, while it depends on bias voltage almost linearly in the three-atom wire. We have clarified that nonlinear $I$–$V$ characteristics of the five-atom wire are induced due to the effect of $\pi$ channels in the ballistic transport regime.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-08-15

著者

• OHNO Takahisa

  Institute of Industrial Science, University of Tokyo

• Ohno Takahisa

  Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

• Asari Yusuke

  Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

• Nara Jun

  National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

• Kobayashi Nobuhiko

  National Institute of Advanced Industrial Science and Technology, Tsukuba Central 1, Tsukuba, Ibaraki 305-8561, Japan

関連論文

• First-Principles Calculation Software for Dielectric Response Study of High-k Materials
• $\pi$ Channel Effects in Transport Properties of Al Nanowires at Finite Biases

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