GaN-Based Light-Emitting Diode with Indium–Tin–Oxide and Vertical Electrode

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概要

• 論文の詳細を見る

• A sapphire-etched vertical-electrode nitride semiconductor (SEVENS) light-emitting diode (LED) is fabricated by a selective wet-etching technique. The SEVENS-LED has an indium–tin–oxide (ITO) transparent metal electrode (TME) and a sapphire via hole. The SEVENS-LED exhibits excellent device performances compared with a lateral-electrode (LE) GaN-based LED formed on a sapphire substrate. The light-output power of the SEVENS-LED is ${\sim}7$ mW at a 20 mA junction current, which means 13% external quantum efficiency (EQE). The electrostatic discharge (ESD) test shows excellent ESD characteristics of the SEVENS-LED compared with those of the ITO LE-LED. The reverse ESD amplitude of SEVENS-LED is approximately 200 V, which is two times higher than that (${\sim}100$ V) of the ITO LE-LED. These improvements of ESD properties are attributed to the change of the lateral electrode to a vertical electrode, without requiring the transfer of the sapphire substrate to a conducting substrate.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-08-15

著者

• Kim Seong-jin

  Photonic Devices Research Laboratory Itswell Co. Ltd.

• Kim Seong-Jin

  Photonic Devices Research Laboratory, Itswell Co., Ltd., 9-4BL, Ochang Scientific Industrial Complex, Namchon-ri, Cheongwon-gun, Chungbuk 363-911, Korea

関連論文

• Vertical Electrode GaN-Based Light-Emitting Diode Fabricated by Selective Wet Etching Technique
• Vertical Electrode GaN-Based Light-Emitting Diode Fabricated by Selective Wet Etching Technique
• GaN-Based Light-Emitting Diode with Indium–Tin–Oxide and Vertical Electrode

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