Selective Epitaxial Growth for Buried Microchannels in Monocrystalline Silicon

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概要

• 論文の詳細を見る

• A simple and single-step technique is presented for the formation of buried channels in monocrystalline silicon wafers. The channels are formed by surface migration of silicon during the selective epitaxial growth of monocrystalline silicon. Various buried-channel shapes and sizes from 1 to 30 μm were formed. This technique is compatible with semiconductor industry processes and allows postprocessing for the integration of microelectronics circuits. The applications targeting heat pipes for integrated circuits or microfluidic channels for microsystems are numerous and promising.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-07-15

著者

• Gaudin Denis

  STMicroelectronics, 16 r Pierre et Marie Curie 37100 Tours, France

• Denoual Matthieu

  Biomis-SATIE, ENS-Cachan antenne de Bretagne, campus Ker Lann, 35170 Bruz, France

• De Sagazan

  STMicroelectronics, 850 r Jean Monnet 38920 Crolles, France

• Guilloux-Viry Martine

  Institut de Chimie de Rennes, LCSIM, campus de Beaulieu, 35000 Rennes, France

関連論文

• Selective Epitaxial Growth for Buried Microchannels in Monocrystalline Silicon

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