High Quality Microwave Zr0.8Sn0.2TiO4 Dielectric Thin Film Prepared by Sol–Gel Method
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概要
- 論文の詳細を見る
High-quality zirconium tin titanate (Zr0.8Sn0.2TiO4, ZST) thin films are deposited along the (100) plane on a p-type Si substrate by the sol–gel method. The effects of two different heat treatment temperatures, 250 and 450°C, for organic burn-out between each spin coating on the crystal structure, morphology, roughness and thickness of the films are investigated. X-ray diffraction confirms a pronounced preferred orientation in thinner films and a polycrystalline structure in thicker films. Microstructure analyses by scanning electronic microscopy (SEM) and atomic force microscopy (AFM) prove that a high-quality ZST film approximately 75 nm thick with a smooth surface (surface roughness of 4 nm) is obtained under suitable processing conditions.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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WENG Min-Hang
National Nano Device Laboratories
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Weng Min-Hang
National Nano Device Laboratories, Tainan, Taiwan
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Ho Yung-Shou
Department of Applied Chemistry, Fooyin University, Kaohsiung Hsien, Taiwan
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Wang Shuen-Shian
Department of Applied Chemistry, Fooyin University, Kaohsiung Hsien, Taiwan
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