Advanced HSPICE Macromodel for Magnetic Tunnel Junction
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概要
- 論文の詳細を見る
Magnetoresistive random access memory (MRAM) using a magnetic tunnel junction (MTJ) memory cell has the potential to revolutionize both high-density and high-speed memory applications with devices exhibiting non-volatility and good write endurance. This work presents a macromodel for an MTJ that is applicable to an HSPICE circuit simulator. The macromodel is realized as a five-terminal subcircuit that reproduces the characteristics of an MTJ including hysteresis and asteroid curves with thermal variation, and the $R$–$V$ characteristics.
- 2005-04-15
著者
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Kim Daejung
School Of Bioscience And Biotechnology Kangwon National University
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Shin Hyungsoon
Department of Electronics Engineering, Ewha Womans University, Seoul 120-750, Korea
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Lee Seungjun
Department of Information Electronics Engineering, Ewha Womans University, 11-1, Daehyun-Dong, Seodaemun-Gu, Seoul 120-750, Korea
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Lee Seungjun
Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Lee Seungyeon
Department of Information Electronics Engineering, Ewha Womans University, 11-1, Daehyun-Dong, Seodaemun-Gu, Seoul 120-750, Korea
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Shin Hyungsoon
Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
-
Shin Hyungsoon
Department of Information Electronics Engineering, Ewha Womans University, 11-1, Daehyun-Dong, Seodaemun-Gu, Seoul 120-750, Korea
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Lee Seungyeon
Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Kim Daejung
School of Electrical Engineering, Kookmin University, 861-1, Chongnung-Dong, Songbuk-Gu, Seoul 136-702, Korea
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