Shin Hyungsoon | Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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概要
- Shin Hyungsoonの詳細を見る
- 同名の論文著者
- Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Koreaの論文著者
関連著者
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Shin Hyungsoon
Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Lee Seungjun
Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Lee Seungyeon
Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Shin Hyungsoon
Department of Electronics Engineering, Ewha Womans University, Seoul 120-750, Korea
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Lee Seungyeon
Department of Information Electronics Engineering, Ewha Womans University, 11-1, Daehyun-Dong, Seodaemun-Gu, Seoul 120-750, Korea
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Kim Sojeong
Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Kim Daejung
School Of Bioscience And Biotechnology Kangwon National University
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Kim Jihyun
Department Of Chemical And Biological Engineering Korea University
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Ahn Sora
Department of Electronics Engineering, Ewha Womans University, Seoul 120-750, Korea
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Lim Hyein
Department of Electronics Engineering, Ewha Womans University, Seoul 120-750, Korea
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Lee Seungjun
Department of Electronics Engineering, Ewha Womans University, Seoul 120-750, Korea
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Lee Hyunju
Department of Information Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Seungjun Lee
Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Lee Seungjun
Department of Information Electronics Engineering, Ewha Womans University, 11-1, Daehyun-Dong, Seodaemun-Gu, Seoul 120-750, Korea
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Shin Hyungsoon
Department of Information Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Hyungsoon Shin
Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Shin Hyungsoon
Department of Information Electronics Engineering, Ewha Womans University, 11-1, Daehyun-Dong, Seodaemun-Gu, Seoul 120-750, Korea
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Lee Hyunjoo
Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Sojeong Kim
Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Lee Seungyeon
Department of Information Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Lee Gamyoung
Department of Information Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Kim Daejung
School of Electrical Engineering, Kookmin University, 861-1, Chongnung-Dong, Songbuk-Gu, Seoul 136-702, Korea
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Kim Jihyun
Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Son Aeri
Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Jeong Narae
Department of Electronics Engineering, Ewha Womans University, 11-1 Daehyun-dong, Seodaemun-gu, Seoul 120-750, Korea
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Choi Jaehoon
R&D Division, Hynix Semiconductor Inc., Ichon, Kyoungi-do 467-701, Korea
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Choi Jaehoon
R&D Division, Hynix Semiconductor Inc., Ichon, Kyoungi-do 467-701, Korea
著作論文
- Improved Explicit Current–Voltage Model for Long-Channel Undoped Surrounding-Gate Metal Oxide Semiconductor Field Effect Transistor
- Physics-Based SPICE Model of Spin-Torque Oscillators
- Advanced HSPICE Macromodel for Magnetic Tunnel Junction
- Advanced Macro-Model with Pulse-Width Dependent Switching Characteristic for Spin Transfer Torque Based Magnetic-Tunnel-Junction Elements
- Design of Logic Module Based on Magnetic-Tunnel-Junction Elements for Nonvolatile Field-Programmable Gate Array
- Design of Reconfigurable Logic Circuits Based on Single-Layer Magnetic-Tunnel-Junction Elements