Studies of Ultrathin InGaAs Quantum Wells Grown at Different Temperatures by Magneto-Photoluminescence

概要

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Here, the ultrathin InGaAs/GaAs single-quantum-well (QW) structures grown at different temperatures are studied using magneto-photoluminescence in magnetic fields of up to 15 T both parallel ($B^{\|}$) and perpendicular ($B^{\bot}$) to the growth axis. The dimensionalities and the effective diameters are deduced from the low-field diamagnetic shift. The dimensionalities are approximately the same, 0.3, and the effective diameters obtained in $B^{\|}$ are almost the same for the QWs grown at different temperatures. The effective diameter measured in $B^{\bot}$ is larger than that in $B^{\|}$ for the QW grown at high temperature while it becomes smaller than that in $B^{\|}$ for the QW grown at the lowest temperature due to the exciton localization. The anomalous diamagnetic shift shows a cusp at approximately 4 T in $B^{\bot}$, and the high-field diamagnetic shift can be well-described as $B^{4/3}$ dependence based on the effective width well model.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-02-15