Numerical Analysis for the Application of Electric Current to Silicon Semiconducting Materials

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概要

• 論文の詳細を見る

• The application of electric field to silicon semiconductors materials is used to modify the melt convection mode in the Czochralski growth configuration and to control the structures at the crystal surface. Nonlinear phenomena, namely, the decrease of the stabilized applied voltage in a closed circuit with the increase of the electric current, were observed experimentally. A mathematical model for predicting the temperature of silicon crystal and the electric field in a closed circuit has been developed to study the electric current-induced Joule heating phenomena in silicon semiconductor materials. In this work, numerical simulations have been performed using the Newton method and implicit Euler time integration. It has been demonstrated that numerical analyses are in qualitative agreement with the experimental results, and it is possible to reproduce the nonlinear behavior and to simulate the transport phenomena in the application of electric current to silicon materials.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-02-15

著者

• Wang Jong

  Korea Institute Of Ceramic Engineering And Technology

• Wang Jong

  Korea Institute of Ceramic Engineering and Technology, 233-5, Gasan-Dong, Guemcheon-Gu, Seoul 153-801, Korea

関連論文

• Control of Axial Resistivity Distribution in Bridgman Silicon Growth
• Numerical Analysis for the Application of Electric Current to Silicon Semiconducting Materials

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