Interface Control between Pentacene Film and Si(001) by Chemisorbed Buffer Monolayer

概要

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Pentacene films were fabricated by molecular beam deposition on two silicon (Si) substrates. One of the substrates was Si(001) with a chemisorbed 1,4-cyclohexadiene surfactant buffer and the other was Si(001) with a SiO2 oxide layer. The 1,4-cyclohexadiene buffered surface was characterized by high-resolution electron energy loss spectroscopy (HREELS). 1,4-cyclohexadiene molecules were adsorbed on the clean Si(001) ($2\times 1$) substrate forming Si-C covalent bonds at 300 K and a well-ordered ($2\times 1$) structure was preserved even after adsorption of the molecules. The chemisorbed 1,4-cyclohexadiene layer is thermally stable at approximately room temperature. The morphology and crystallinity of the pentacene films were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis, respectively. The AFM images showed larger grains exceeding 1 μm for the pentacene film deposited on the Si(001) substrate with 1,4-cyclohexadiene buffer, whereas the small grains of 200 nm on average were observed for the film on Si(001) with SiO2 under the same deposition rate and substrate temperature.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-01-15