Photoluminescence Study of the Sol–Gel Derived (Ba0.5Sr0.5) TiO3 Thin Films for the Characterization of Trap States
スポンサーリンク
概要
- 論文の詳細を見る
Room temperature photoluminescence (PL) spectroscopy was done to investigate luminescent trap states in sol–gel deposited (Ba,Sr)TiO3 thin films. The pre-sintered films showed three distinct PL peaks. Increase in the peak intensity was observed with increase in pre-sintering temperature. These PL peaks were assigned to (a) singly charged oxygen vacancies (b) TiO2 networks and (c) the contribution from the substrate. In contrast, the sintered samples showed only a band-edge luminescence with an intense peak near the band-gap energy. Identification of such observed trap states are important in understanding the results of dielectric measurements because they contribute to the leakage currents and loss mechanisms.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-01-15
著者
-
Chander Harish
LMD Group, National Physical Laboratory, Dr K S Krishnan Road, New Delhi 110012, India
-
Sharma Ganpat
Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
-
Roy Somnath
Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
-
Bhatnagar Mukesh
Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
-
Karar Nirmalya
LMD Group, National Physical Laboratory, Dr K S Krishnan Road, New Delhi 110012, India