Cleaning Method for Thickness Metrology of SiO2 Thin Films on Si Substrates by Heating in Atmosphere
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概要
- 論文の詳細を見る
In order to evaluate accurately the thickness of SiO2 films on Si substrates, we applied a heat cleaning method in the atmosphere to remove adsorbates on the SiO2 surface using a hot plate. A high reproduciblity was obtained for the thicknesses of the sample just after heating. In addition, carbon-derived contaminants on the surface were markedly decreased by the heating. Since this method is extremely simple and requires no special equipment and chemicals, it has a potential to become an effective cleaning method for accurate thickness evaluation of SiO2 thin films on Si substrates.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-11-15
著者
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Azuma Yasushi
Materials Characterization Division National Metrology Institute Of Japan (nmij)
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Kojima Isao
Materials Characterization Division National Metrology Institute Of Japan (nmij)
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Kojima Isao
Materials Characterization Division, National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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Fujimoto Toshiyuki
Materials Characterization Division, National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
関連論文
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- Cleaning Method for Thickness Metrology of SiO2 Thin Films on Si Substrates by Heating in Atmosphere