Low Temperature Growth GaAs on Ge
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概要
- 論文の詳細を見る
In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor phase epitaxy has been studied. The experiments show that a growth temperature of 530°C and a V/III ratio of 3.5 result in smooth GaAs surfaces. Atomic force micrographs do not show any anti-phase boundaries on the surface of GaAs grown on a misoriented substrate. X-ray diffraction curves show that the layer tilt is reduced as the growth temperature is lowered. Synchrotron X-ray topography reveals very low threading dislocation densities of 300 cm-2 for the GaAs epitaxial layers. Additionally, no misfit dislocations are observed. If a single layer is deposited at low temperature, secondary ion mass spectrometry shows a considerably reduced arsenic diffusion into Ge. When an additional layer is deposited at higher temperature on top of the initial low temperature layer, a substantial increase for the deep concentration-dependent arsenic diffusion is found.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-11-15
著者
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McNally P.
Research Institute for Networks and Communications Engineering (RINCE), Dublin City University, Dublin 9, Ireland
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Knuuttila L.
Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, FIN-02015 HUT, Finland
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Lankinen A.
Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, FIN-02015 HUT, Finland
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Likonen J.
VTT Processes, P.O. Box 1608, FIN-02044 VTT, Finland
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Lipsanen H.
Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, FIN-02015 HUT, Finland
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Lu X.
Research Institute for Networks and Communications Engineering (RINCE), Dublin City University, Dublin 9, Ireland
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Riikonen J.
Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, FIN-02015 HUT, Finland
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Tuomi T.
Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, FIN-02015 HUT, Finland