Amorphous/Microcrystalline Silicon Thin Film Transistor Characteristics for Large Size Oled Television Driving

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概要

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• An amorphous silicon thin film transistor (TFT) and a TFT with a microcrystalline/amorphous channel layer are studied for organic light emitting diode (OLED) backplane usage. The amorphous silicon TFT $V_{\text{TH}}$ shift can be reduced with saturation region operation. There are two mechanisms that cause the $V_{\text{TH}}$ shift in a saturation region: One that appears with continuous current flow and the other that appears with the transient charge injection into a gate insulator. SiH4 flow in hydrogen plasma with a pumping flow period shorter than the gas residence time produces a high-transconductance microcrystalline/amorphous silicon TFT.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-08-15

著者

• Tsujimura Takatoshi

  IBM Japan, Yamato, Kanagawa 251-0038, Japan

関連論文

• Amorphous/Microcrystalline Silicon Thin Film Transistor Characteristics for Large Size Oled Television Driving

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