Study of Si Nanostructure in SiO2 layer by Si+ Implantation and Rapid Thermal Annealing

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概要

• 論文の詳細を見る

• In this paper, a process of controlling the size of silicon (Si) quantum dots in SiO2 layers by Si+ implantation and rapid thermal annealing (RTA) is proposed. Through the proposed process, nanoscale Si islands in the range of 2–5 nm have been generated and then analyzed by various techniques including photoluminescence (PL) analysis, atomic force microscopy (AFM), and transmission electron microscopy (TEM). The characterization results are consistent with the results of theoretical computation based on the quantum confinement model by the finite-element method (FEM). The proposed process and results will be helpful in developing single-electron devices.

• 2004-07-15

著者

• Kao Chin-hsing

  Semiconductor Lab. Dept. Of Applied Physics Ccit Ndu

• Kao Chin-Hsing

  Semiconductor Lab., Dept. of Applied Physics, CCIT, NDU, Tahsi, Taoyuan 335, Taiwan, R.O.C.

• Lu Fu-Fa

  School of Defense Science, Chung Cheng Institute of Technology (CCIT), National Defense University (NDU), Tahsi, Taoyuan 335, Taiwan, R.O.C.

• Lin Tung-Hsien

  Semiconductor Lab., Dept. of Applied Physics, CCIT, NDU, Tahsi, Taoyuan 335, Taiwan, R.O.C.

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• Study of Si Nanostructure in SiO2 layer by Si+ Implantation and Rapid Thermal Annealing

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