Sub-100-nm Photolithography Based on Plasmon Resonance

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概要

• 論文の詳細を見る

• Sub-100-nm patterns have been patterned photolithographically using metallic masks with the exposure wavelength of 436 nm. Preliminary numerical simulations indicate a practical resolution limit for the lithographic process. The near-field distribution of light can be optimized to fabricate nanostructures including isolated nano-dots or nano-lines by changing the parameters of the mask. The results show the potential of plasmon lithography for attaining subwavelength features.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-06-15

著者

• Ishihara Teruya

  Frontier Research System Riken

• Luo Xiangang

  Frontier Research System Riken

• Luo Xiangang

  Frontier Research System, RIKEN, 2-1 Hirosawa, Wako 351-0198, Japan

• Ishihara Teruya

  Frontier Research System, RIKEN, 2-1 Hirosawa, Wako 351-0198, Japan

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• Sub-100-nm Photolithography Based on Plasmon Resonance

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