Alignment Offset Analyzer against Wafer-Induced Shift

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In lithography, the alignment error can be caused by three factors. The first factor is the tool-induced shift (TIS), the second is the wafer-induced shift (WIS) and the third is the interaction between TIS and WIS. Regarding TIS, we have defined a new evaluation criterion, and regarding WIS, we have shown that the error analyzer can quantify and compensate for the alignment error using an atomic force microscope (AFM) and optical simulation. We have termed this analyzer the 'alignment offset analyzer'. By using this analyzer, the topography of the alignment mark and the topography of the resist surface can be measured individually using the AFM. The two topography data are wrapped over in the signal simulator. By using this wrapped topography, the alignment signal and alignment measurement error value are calculated. By considering the topography and alignment measurement error values, the alignment error can be quantified. Furthermore, the alignment offset can also be calculated before the exposure sequence, and the alignment offset can be fed to the exposure tool without using the send-ahead wafer. For this analyzer, we use the AFM Dimension 9000 M (Veeco Inc.) and the simulator that contains TEMPESTpr (Panoramic Technology Inc.), and CODEV (Optical Research Associates). In this paper, we report the accuracy of the alignment offset analyzer. The exposure tool result and the calculated result from AFM data by the simulator showed a good agreement, and the difference was several nanometers.
2004-06-15

Alignment Offset Analyzer against Wafer-Induced Shift

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