Incident Angle Dependence of O2 Cluster Ions on Ta2O5 Thin Film Properties

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概要

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• Ta2O5 dielectric films were deposited on Si and quartz substrates by O2 gas cluster ion beam (O2-GCIB) assisted deposition at various incidence angles. The film structure and optical properties were significantly influenced by incidence angle. For films deposited using O2-GCIB at 7 keV energy, when the incidence angle was smaller than 30° from the surface normal, a very smooth and dense film was realized and there were no significant difference in optical properties as the films deposited at normal incidence. However, when the incidence angle was higher than 45°, surface roughness increased and ripples were formed on the film surface. At a higher acceleration energy, which induces the sputtering of materials, previous reports have shown that in the case of Ar GCIB, ripple formation has been observed at an incidence angle larger than 45°. The same result was observed in the case of O2 cluster ion beam assisted deposition.

• 2004-06-15

著者

• Tsubakino Harushige

  Faculty Of Engineering Himeji Institute Of Technology

• Toyoda Noriaki

  Laboratory Of Advanced Science & Technology For Industry University Of Hyogo

• Inoue Shinsuke

  Faculty Of Engineering Himeji Institute Of Technology

• Yamada Isao

  Laboratory of Advanced Science & Technology for Industry, University of Hyogo, 3-1-2 Kouto, Kamigori, Ako, Hyogo 678-1205, Japan

• Toyoda Noriaki

  Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology, 3-1-2, Kouto, Kamigori, Ako-gun, Hyogo 678-1205, Japan

• Inoue Shinsuke

  Faculty of Engineering, Himeji Institute of Technology, Shosha, Himeji, Hyogo 671-2201, Japan

• Yamada Isao

  Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology, 3-1-2, Kouto, Kamigori, Ako-gun, Hyogo 678-1205, Japan

関連論文

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• Incident Angle Dependence of O2 Cluster Ions on Ta2O5 Thin Film Properties
• Near Edge X-Ray Absorption Fine Structure Study for Optimization of Hard Diamond-Like Carbon Film Formation with Ar Cluster Ion Beam
• Low-Damage Sputtering of GaAs and GaP Using Size-Selected Ar Cluster Ion Beams
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