AlGaAs/GaAs Quantum Well Lasers Grown by Metalorganic Chemical Deposition Using Tertiarybutylarsine in Nitrogen Ambient

概要

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Using tertiarybutylarsine (TBAs) as the arsenic precursor and the nitrogen as the carrier gas, high-quality AlGaAs/GaAs quantum well (QW) diode laser materials have been grown by metalorganic chemical vapor deposition (MOCVD). Photoluminescence and device measurement studies indicate that the quality of the grown AlGaAs/GaAs laser materials can be comparable to those grown by using AsH3 as the arsenic precursor and hydrogen as the carrier gas. For the first time, a low threshold current density of 200 A/cm2 for 1000 μm cavity length broad area AlGaAs/GaAs lasers has been achieved by this MOCVD growth method. It has been shown that TBAs and nitrogen gas can be employed in MOCVD growth of the widely used AlGaAs/GaAs laser materials, for substituting the highly toxic source gas AsH3 and the highly explosive carrier gas H2.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-06-15