Investigation of SiCs+, GeCs+ and SiCs2+ Secondary Ion Emission from Si1-xGex

概要

論文の詳細を見る
The entire composition range of Si1-xGex was examined to investigate the generation mechanisms of SiCs+, GeCs+ and SiCs2+ ions in secondary ion mass spectrometry. The generation efficiency of Cs+ secondary ion varied strongly with the sputtering yield along with the composition, while the generation efficiency ratio of SiCs+ or GeCs+ to Cs+ was almost constant for the composition. The combination probabilities of Cs+ and neutral Si or Ge are also constant independent of the composition. Therefore, the composition of Si1-xGex can be derived using a single Si1-xGex whose composition is known or using pure Si and pure Ge as the standard samples. The intensity of Cs2+ exhibited a peak around $x=0.5$. The peak may denote that half of the Cs atoms are ionized. SiCs2+ is not only generated by a combination of Cs2+ and neutral Si because the generation efficiency ratio of SiCs2+ to Cs2+ varies with the composition.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-05-15