Possible Deviation from the well-known Threshold Behavior of Field-Effect Doping Phenomenon in Extremely Thin Organic Semiconductor Layer

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概要

• 論文の詳細を見る

• Field-effect doping in a metal/insulator/semiconductor/metal four-layer model indicates that the well-known threshold behavior $Q\propto(V_{\text{G}}-V_{\text{th}})$, where $Q$ is the induced charge and $V_{\text{G}}$ and $V_{\text{th}}$ are the bias voltage and its threshold value, respectively, should be realized even when the thickness of the semiconductor layer ($d_{\text{s}}$) is on the 10 nm scale. At the same time, however, this model suggests that the doping phenomenon deviates from this simple threshold behavior when the density of states is small and $d_{\text{s}}$ is on the 1 nm scale.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2004-05-15

著者

• Ikegami Keiichi

  Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology

• Ikegami Keiichi

  Nanotechnology Research Institute, AIST, 1-1-1 Umezono, Tsukuba 305-8568, Japan

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• Possible Deviation from the well-known Threshold Behavior of Field-Effect Doping Phenomenon in Extremely Thin Organic Semiconductor Layer

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