Sheath Equivalent Electrical Circuit Model for Transient Sheath Dynamics

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概要

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• This work presents a new alternate understanding and interpretation of the observed ion implantation current profile in transient sheath experiments. Two time-scale structure of the observed ion implantation current profile is clearly noted in constant phase of applied pulse voltage at the electrode. But no complete and self-consistent model calculation for theoretical explanation is available as yet. We treat the positive (ion-rich) sheath as an equivalent electrical series LCR circuit and use Kirchoff's law to arrive at a second order differential equation for theoretical description of the defined circuit. The Child law describes the expanding motion of transient sheath dynamics and monitors current in the circuit. Numerical solution of the defined driven circuit equation yields almost the same current profile as observed in the transient sheath experiments.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-05-15

著者

• Deka Utpal

  Centre of Plasma Physics, Saptaswahid Path, Dispur 781006, Assam, Bharat

• Prakash Ram

  Institute for Plasma Research, Bhat, Gandhinagar 382428, Gujrat, Bharat

• Sarma Arun

  Department of Applied Physics, BIT, Mesra, Ranchi 835215, Jharkhand, Bharat

• Dwivedi Chandra

  Centre of Plasma Physics, Saptaswahid Path, Dispur 781006, Assam, Bharat

関連論文

• Sheath Equivalent Electrical Circuit Model for Transient Sheath Dynamics

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