Formation of Silicon Needle Crystal by Anodic Reaction
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概要
- 論文の詳細を見る
It is shown that the formation of a Si needle crystal is possible by the anodic reaction of p-type 23 $\Omega$$\cdot$cm Si. The height of the needle increased to 25 and 34 μm with the increases of anodic current density and anodic time, respectively. The width of the needle depended on the resistivity of Si and was 2.1 and 0.54 μm for 23 and 10 $\Omega$$\cdot$cm, respectively.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-05-15
著者
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Mitarai Yuko
Faculty Of Science And Engineering Shimane University
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NISHIDA Atsushi
Faculty of Pharmaceutical Sciences, Chiba University
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Harada Hiroshi
Faculty Of Agriculture University Of Miyazaki
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Harada Hiroshi
Faculty of Science and Engineering, Shimane University, 1060 Nishi-Kawatsu, Matsue 690-8504, Japan
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Miyakoda Masato
Faculty of Science and Engineering, Shimane University, 1060 Nishi-Kawatsu, Matsue 690-8504, Japan
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Mishima Jyun
Faculty of Science and Engineering, Shimane University, 1060 Nishi-Kawatsu, Matsue 690-8504, Japan
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