Au/GaAs Magnetoresistive-Switch-Effect Devices Fabricated by Wet Etching

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概要

• 論文の詳細を見る

• Au/GaAs magnetoresistive-switch-effect (MRS effect) devices were successfully fabricated by the wet etching method. A large MRS effect was observed. In the current-voltage curves, the current jumped steeply at a threshold voltage of 32.0 V. The threshold voltages shifted to higher values and became less steep with increasing magnetic field. Above 2,000 Oe, no current jump driven by the applied voltage could be observed. The magnetoresistance (MR) ratio reached 1,000,000% at 15,000 Oe when the devices were operated above the threshold voltage. Also magnetic field sensitivity was greatly improved. To achieve a 1000% MR ratio, only 300 Oe was required at 32.2 V.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-15

著者

• Mizuguchi Masaki

  Synaf National Institute Of Advanced Industrial Science And Technology (aist)

• AKINAGA Hiroyuki

  SYNAF, National Institute of Advanced Industrial Science and Technology (AIST)

• Sun Zhi-gang

  Synaf National Institute Of Advanced Industrial Science And Technology (aist)

• Sun Zhi-gang

  SYNAF, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan

関連論文

• Au/GaAs Magnetoresistive-Switch-Effect Devices Fabricated by Wet Etching
• Au/GaAs Magnetoresistive-Switch-Effect Devices Fabricated by Wet Etching

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