Optimization and Properties of Zn Doped Indium Oxide Films on Plastic Substrate

概要

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In this report, optimization of the Zn content in Zn doped indium oxide (IZO) films deposited on plastic substrates at low temperature (20°C) was investigated in relation to variation of the Zn content from 0 to 15.9 at%. In the series of IZO films, 12.2 at% Zn doped indium oxide films, (IZO(12.2)), showed the lowest resistivity ($2.9{\times}10^{-4}$ $\Omega$cm). The resistivity of IZO(12.2) films deposited on 100-μm-thick polycarbonate foil was approximately one half of that of ITO films ($6{\times}10^{-4}$ $\Omega$cm) deposited under comparable conditions. IZO(12.2) films exhibited the lowest resistivity, high transmittance of over 85%, a rapid etching rate and good alkaline durability. The reason for rapid etching rate originates from the amorphous structure of IZO films. The thermal property of IZO(12.2) evaluated by a differential scanning calorimeter (DSC) clarified that the phase transformation from amorphous to crystalline began at 350°C, which meant the structure of IZO(12.2) remained amorphous for a practical temperature of the plastic substrate. Optical gap and Hall measurements revealed that the carrier density was decreased after annealing, whereas, the mobility was increased in relation to a trade off with the carrier density.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-02-15