Isotope Effects on H and D Coadsorptions on Si Surfaces
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概要
- 論文の詳細を見る
We studied isotope effects on D and H coadsorptions on the Si(100) and Si(111) surfaces, employing an atomic beam method combined with a desorption measurement technique. We evaluated $\mathrm{D}:\mathrm{H}$ ratios to be approximately $6:4$ for both the Si(100) and Si(111) surfaces exposed to the atomic H/D beam mixed with equal amounts of H and D atoms. This observed isotope effect was interpreted in terms of mass-dependent abstraction of surface adatoms by incident atoms. The observed $\mathrm{D}:\mathrm{H}$ ratios could be well reproduced by the simulation based on the previously reported isotope effect on D(H) abstraction by H atoms.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-02-15
著者
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Khanom Fouzia
Department Of Electrical Engineering Kyushu Institute Of Technology
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NAMIKI Akira
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Rahman Faridur
Department Of Electrical Engineering Kyushu Institute Of Technology
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Rahman Faridur
Department of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan
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Ohnishi Nobuyuki
Department of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan
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Inanaga Shoji
Department of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan
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