A Novel Elementary Single Electron Transistor Negative Differential Resistance Device
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概要
- 論文の詳細を見る
A novel elementary single electron transistor (SET) device architecture providing negative differential resistance (NDR) is proposed and verified with SET analytical models. The proposed architecture consists of two cross-connected SETs, biased with constant current source, and it exhibits negative differential resistance for a significant range of input voltage. The effects of bias current and SET asymmetry on the circuit characteristics are shown from a design perspective. Comparison of the proposed architecture with other NDR devices is also presented.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-02-15
著者
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Ionescu Adrian
Electronics Laboratories (leg) Institute Of Microelectronics And Microsystems (imm) Swiss Federal In
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Mahapatra Santanu
Electronics Laboratory (LEG), Institute of Microelectronics and Microsystems (IMM), Swiss Federal Institute of Technology Lausanne (EPFL), CH 1015, Switzerland
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Ionescu Adrian
Electronics Laboratory (LEG), Institute of Microelectronics and Microsystems (IMM), Swiss Federal Institute of Technology Lausanne (EPFL), CH 1015, Switzerland
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