Growth of ZnO Nanowires without Catalyst on Porous Silicon
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概要
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Porous silicon (PS) technology is, for the first time, used to grow ZnO nanowires on the surface of a PS substrate with a rough morphology without any catalyst. The characteristics of these nanowires were investigated by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), energy dispersive X-ray (EDX), grazing-angle X-ray diffraction (XRD) and photoluminescence (PL) measurements. Zn vapor condenses easily on the PS surface and forms a wetting layer, but not on the flat Si surface. The PS surface provides a rough surface morphology to form a wetting layer by decreasing the surface energy so that ZnO nanowires can grow without any catalyst. The Zn-rich composition changed during growth; the ratio of zinc to oxygen was near to one at the top part of the nanowires. The probable growth mechanism was the vapor-solid (VS) process. In principle, the selective growth of ZnO nanowires on Si-base devices for optoelectronic application is possible.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-12-15
著者
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Chang Chia-Chieh
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsin-Chu, Taiwan, R.O.C.
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Chang Chia-Shiung
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsin-Chu, Taiwan, R.O.C.
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Chang Chen-Shiung
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsin-Chu, Taiwan, R.O.C.