Thin-Film Silicon —Growth Process and Solar Cell Application—

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概要

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• Growth processes of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon ($\mu$c-Si:H) from SiH4 and H2/SiH4-glow discharge plasmas are reviewed. Differences and similarities between $\mu$c-Si:H and a-Si:H growth reactions in the plasma and on the film-growing surface are discussed, and the nucleus-formation process followed by the epitaxial-like crystal growth process is explained as being processes unique to $\mu$c-Si:H. The governing reaction of dangling-bond-defect density in the resulting a-Si:H and $\mu$c-Si:H films is also discussed in order to obtain a clue to improve the optoelectronic properties of these materials to enable device applications, particularly to thin-film silicon-based solar cells. Material issues concerning the realization of low-cost high-efficiency solar cells are described, and finally, recent progress in those issues is presented.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-12-15

著者

• Matsuda Akihisa

  Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba 278-8510, Japan

関連論文

• Thin-Film Silicon —Growth Process and Solar Cell Application—

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