Epitaxial Lift-Off of GaAs/AlGaAs Films with Vertical Cavity Surface Emitting Lasers for High-Density Packaging of OptoElectronic Interconnections

概要

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We have developed a method for epitaxial lift-off of GaAs/AlGaAs films with vertical cavity surface emitting lasers (VCSELs) that enables device characteristics to be evaluated before and after epitaxial lift-off. The method is also utilized in combination with a technique that fabricates a deep hole in GaAs substrate to enable light emission at a wavelength of 850 nm. Thermal resistances of the 10-μm-thick VCSELs analyzed by emission peak wavelength shift are estimated at 0.89–0.90 K/mW for devices buried in resin mold and 0.76–0.86 K/mW for devices without resin mold, respectively. These values are 20–40% larger than that of VCSELs before epitaxial lift-off. The emission peak shifts of these thin-film devices do not exceed 2 nm, indicating that the method is applicable to optoelectronic interconnections requiring high-density packaging.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-10-15