Effects of Air Exposure on SiO2 Surfaces Irradiated with Fluorocarbon Plasma

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概要

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• Etching performance is strongly related to the structure of the surface reaction layer of the etched substrate. The substrate should generally be transferred under a vacuum for surface analysis, but this is not always possible due to experimental restrictions. The effects of air exposure on the surface of SiO2 irradiated with fluorocarbon plasma were studied using quasi-in situ X-ray photoelectron spectroscopy. It was found that the chemical compositions and the thickness of the fluorocarbon layer were not affected by air exposure, but the atomic concentration of fluorine contained in the surface reaction layer decreased dramatically.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2004-01-15

著者

• Sekine Makoto

  Environmental Benign Etching Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET), 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Kurihara Kazuaki

  Environmental Benign Etching Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET), 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Kurihara Kazuaki

  Environmental Benign Etching Technology Laboratory, ASET, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

• Yamaoka Yoshikazu

  Environmental Benign Etching Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET), 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

関連論文

• Effects of Air Exposure on SiO2 Surfaces Irradiated with Fluorocarbon Plasma
• Enhancement of Copper Surface Oxidation in an Air Atmosphere Due to Fluorine Residue

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