Linear and Nonlinear Electron Transport in Modulation-Doped AlGaN/GaN Heterostructures
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概要
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We have theoretically investigated electron transport characteristics of two-dimensional electron gas in the modulation-doped AlGaN/GaN heterostructure by using the balance-equation approach. Temperature-dependent ohmic mobility and hot-electron transport property are calculated with an accurate treatment of the realistic scatterings by remote and background impurities, acoustic phonons (interacting with electrons through deformation and piezoelectric potentials), and polar-optic phonons. It is found that, for the optimized AlGaN/GaN heterostructure, its ohmic mobility could be as high as $4\times 10^{5}$ cm2/V$\cdot$s, as predicted by the Monte-Carlo simulation. The dependence of the ohmic mobility on the remote doping concentration and the spacer width is also discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-01-15
著者
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Cao J.
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, P. R. China
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Yao W.
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, P. R. China