Influence of Structural Defects on the Polishing of Silicon Carbide Single Crystal Wafers

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概要

• 論文の詳細を見る

• This study attempts to reveal the influence of major defects such as micropipes and planars on the polishing characteristics of silicon carbide (SiC) wafers. SiC wafers were lapped and finish-polished using chemical-mechanical polishing. The surface finish examinations were performed using atomic force microscopy along with a stylus instrument and revealed that for SiC wafers with a low defect density the average surface roughness is less than 5 A. It was found that scratches are generated due to chipping of the walls of micropipes and planars. Moreover, depending on the micropipe density (MPD), wavy features or so-called "orange peels" are created. The quantitative dependence of roughness parameters and the uniformity of surface finish on the micropipe density were evaluated and the occurrence of orange peel was found to increase when the MPD exceeds 100 cm-2.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-01-15

著者

• SUDARSHAN Tangali

  Department of Electrical Engineering, University of South Carolina

• Lashkov Tsanko

  Department Of Electrical Engineering University Of South Carolina

• Bondokov Robert

  Department Of Electrical Engineering University Of South Carolina

• Sudarshan Tangali

  Department of Electrical Engineering, University of South Carolina, Columbia SC 29208, USA

• Lashkov Tsanko

  Department of Electrical Engineering, University of South Carolina, Columbia SC 29208, USA

関連論文

• A Method for Defect Delineation in Silicon Carbide Using Potassium Hydroxide Vapor
• Influence of Structural Defects on the Polishing of Silicon Carbide Single Crystal Wafers

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