Electronic Structure of Al2O3 Thin Film Studied Using First-Principle Band Calculation
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概要
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The electronic structures of Al2O3 thin film are calculated within the framework of the local density approximation using the full-potential-linearized augmented-plane-wave method, for comparison to those of the bulk. The band gap of Al2O3 thin film is about 2.6 eV, which is much smaller than that of the bulk (${\sim}6.6$ eV). It is found that Al2O3 thin film is not a good insulator.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-08-15
著者
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Shiiki Kazuo
Department Of Applied Physics And Physico-informatics Keio University
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Igarashi Masaaki
Department of Applied Physics and Physico-Informatics, Keio University, Yokohama 223-8522, Japan
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Kaijyu Hideo
Department of Applied Physics and Physico-Informatics, Keio University, Yokohama 223-8522, Japan
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