Voltage-Controlled Phase Shifter with Traveling-Wave Field-Effect Transistors

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概要

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• A new type of voltage-controlled phase shifter with the traveling-wave field-effect transistor (TW-FET), which we recently proposed, is analyzed for timing control of ultrashort pulses. In general, the gate capacitance of the TW-FET has a dc-bias dependence due to the effect of the depletion layer formed at the Schottky contact. The phase shifter utilizes this characteristic to control the propagation delay of the signal injected into the gate line of the TW-FET. In addition, the phase shifter utilizes the transconductance of the TW-FET in order to cope with the signal attenuation caused by the electrode loss and/or the diode current. This paper describes a suitable design criterion, and a numerical characterization of the TW-FET as a phase shifter.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-08-15

著者

• Narahara Koichi

  NTT Photonics Laboratories, NTT Corporation, 3–1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

関連論文

• Voltage-Controlled Phase Shifter with Traveling-Wave Field-Effect Transistors
• Characterization of Partially Nonlinear Transmission Lines for Ultrashort-Pulse Amplification
• Compensation of Polarization Mode Dispersion with Electrical Nonlinear Transmission Lines

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