Influence of Cu-decoration to Individual Crystal Originated Pits on Si Wafer

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概要

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• Effects of chemical processes on individual crystal originated pits (COPs) have been studied. Czochralski Si wafers were sequentially subjected to cleaning, growth of 20 nm thick oxide, and high field Cu decoration followed by HF stripping. At each step, all light scattering defects (LSDs) were mapped and characterized using atomic force microscope (AFM). Cu-decoration occurred on most of COPs and origins of COPs as well as defects-in-the-bulk. Resulting final pits can be grouped into two categories, large and no expansion groups. The former dominates and develop only after Cu-decoration. Expansion of pits is attributed to the etching of silicon by copper at 7 MV/cm high electric field. Two different evolution paths of pits are not correlated with any geometrical factors of the pits measured by AFM. The defect-in-the-bulk appears different from that of COPs in origin, located on the outer rim of the wafers.

• 2003-07-15

著者

• Shin Ji-shik

  Atomic-scale Surface Science Research Center And Institute Of Physics And Applied Physics Yonsei Uni

• Lyo In-whan

  Atomic-scale Surface Science Research Center And Institute Of Physics And Applied Physics Yonsei Uni

• Shin Ji-Shik

  Atomic-scale Surface Science Research Center, and Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, South Korea

関連論文

• Influence of Cu-decoration to Individual Crystal Originated Pits on Si Wafer
• Influence of Cu-decoration to Individual Crystal Originated Pits on Si Wafer

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