Synchrotron Radiation Stimulated Etching of SiO2 Thin Films with a Co Contact Mask for the Area-Selective Deposition of Self-Assembled Monolayer

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The area-selective deposition of a self-assembled monolayer (SAM) was demonstrated on a pattern structure fabricated by synchrotron radiation (SR) stimulated etching of a SiO2 thin film on the Si substrate. The etching was conducted by irradiating the SiO2 thin film with SR through a Co contact mask and using a mixture of SF6 + O2 as the reaction gas. The SR etching stopped completely at the SiO2/Si interface. After the SR etching, the Si surface and the SiO2 surface beneath the Co mask were evaluated by an atomic force microscope (AFM). A dodecene SAM was deposited on the Si surface, and trichlorosilane-derived SAMs (octadecyltrichlorosilane, and octenyltrichlorosilane) were deposited on the SiO2 surface beneath the Co mask. The structure of the deposited SAMs showed a densely packed and well-ordered molecular architecture, which was characterized by infrared spectroscopy, ellipsometry, and water contact angle (WCA) measurements.
2003-06-15