Simulation of Writing and Erasing Processes of GeSbTe and GeSbTeSn with GeN Interlayers in the Case of Dual-Level DVR Discs

概要

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In optical data storage, the development of future-generations discs requires a precise understanding of the phase change processes to be able to forecast the behavior of a material or estimate its potentiality under extraordinary conditions. In this paper, we emphasize that computer simulation is a powerful tool under two conditions: a good modeling of the phase transformation and the use of accurate values for the different parameters involved. The software we have developed includes optical, thermal, thermodynamic and kinetic models and can be used to study both nucleation- and growth-dominated materials under static or dynamic conditions. A study based on transmission electron microscopy (TEM) observations ensures the validity of our assumed physical models and a varied experimental work allows us to extract right values of the parameters. In the present work, we study the behavior of the nucleation-dominated alloy, GeSbTeSn, in the case of dual-level digital video recorder (DVR) discs.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-06-15