0.1-μm-Gate Metamorphic High-Electron-Mobility Transistor on GaAs and Its Application to Source-Coupled Field-Effect Transistor Logic

概要

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The device performances of 0.1-μm-gate InxGa1-xAs/InyAl1-yAs metamorphic high-electron-mobility transistors (MM-HEMTs) on GaAs substrates, depending on the indium composition (XIn), have been investigated. By reducing the XIn, the gate-to-drain breakdown voltage ($BV_{\text{gd}}$) of the MM-HEMT can be improved, while the transconductance ($g_{m}$) and the current gain cut-off frequency ($f_{T}$) decrease because of a reduction in electron mobility of the InxGa1-xAs channel. The balanced values of $g_{m}$ of 900 mS/mm, $f_{T}$ of 166 GHz and $BV_{\text{gd}}$ of 5.2 V for the MM-HEMT with XIn of 0.45 have been obtained. The propagation delay ($t_{\text{pd}}$) of a source-coupled field-effect transistor logic (SCFL) inverter implemented by MM-HEMTs rapidly increases with decreasing XIn, due to the increase in series resistance of the Schottky diode in the source-follower circuit.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-06-15