Device Temperature Measurement of Highly Biased AlGaN/GaN High-Electron-Mobility Transistors

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概要

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• By performing micro-photoluminescence measurements, we investigated the dissipated power dependence and spatial variation of the device temperature of highly biased AlGaN/GaN high-electron-mobility transistors on a sapphire substrate, with a special focus on the relationship between device temperature and device geometry. We found that the device temperature is higher and its variation inside the channel is more marked in wider devices. We also observed a high-temperature area in the vicinity of the devices. We compared these features with calculations and achieved semi-quantitative agreement.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-15

著者

• Shigekawa Naoteru

  Photonics Laboratories Ntt Corporation

• Shiojima Kenji

  Photonics Laboratories Ntt Corporation

• Shiojima Kenji

  Photonics Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Onodera Kiyomitsu

  Photonics Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

関連論文

• Device Temperature Measurement of Highly Biased AlGaN/GaN High-Electron-Mobility Transistors

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