Improvements in Crystal Structure of Two Inch Double-Sided YBCO Thin Films by Preseeded Self-Template Layer

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概要

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• A self-template layer was employed to improve the crystal structure and microwave properties of large-area double-sided YBCO thin films. Two-inch double-sided YBCO thin films with excellent out-of-plane orientation and lateral homogeneity of microwave surface resistance were prepared by using a preseeded self-template layer. The full width at half maximum (FWHM) value of the rocking curve as low as 0.15° was achieved. The electronic channeling pattern was very sharp, clear and symmetric. The values of microwave surface resistance $R_{\text{s}}$ (75 K, 145 GHz, 0 T) below 55 m$\Omega$ were obtained over the entire YBCO thin films on 2-inch LaAlO3 wafers. The majority of the wafer area given in percent has $R_{\text{s}}$ (75 K, 145 GHz, 0 T) values in the range from 15 m$\Omega$ to 40 m$\Omega$. The high frequency (HF) power handling capability was demonstrated by a breakdown field higher than 6 mT at 8.5 GHz and 77 K.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-03-15

著者

• Zhang Ying

  Institute Of Analytical Chemistry Department Of Chemistry Dushu Lake Campus Suzhou University

• Tao Bowan

  Institute Of Microelectronics And Solid State Electronics University Of Electronic Science And Techn

• Li Yanrong

  Institute Of Microelectronics And Solid State Electronics University Of Electronic Science And Techn

• Deng Xinwu

  Institute Of Microelectronics And Solid State Electronics University Of Electronic Science And Techn

• Liu Xingzhao

  Institute Of Microelectronics And Solid State Electronics University Of Electronic Science And Techn

• Zhang Ying

  Institute of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China (UESTC), 610054 Chengdu, China

• Tao Bowan

  Institute of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China (UESTC), 610054 Chengdu, China

• Deng Xinwu

  Institute of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China (UESTC), 610054 Chengdu, China

• Li Yanrong

  Institute of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China (UESTC), 610054 Chengdu, China

• Liu Xingzhao

  Institute of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China (UESTC), 610054 Chengdu, China

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