Dislocation Associated with SiC Formation on the Seed Surface during Silicon Crystal Growth Process by the Czochralski Method

概要

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When a single silicon crystal was grown by the Czochralski method, particles were formed on the seed surface of the Si crystal. The particles were analyzed to study the generation mechanism because the particles contributed to the generation of dislocations. Each particle on the seed surface had a dendritic and two-dimensional morphology with a $\beta$-SiC structure. The area density of a SiC particle had orientation dependence. It was suggested that this phenomenon reflects the atomic step density of the Si surface. The generation mechanism of these SiC particles was considered to be the reaction between the Si solid phase and carbonized gas phase occuring on the seed surface of Si. When SiC is formed on the Si surface, a dislocation is generated from the interface between SiC and Si. It was concluded that the dislocation is generated by a combination of both the distortion generated by SiC on the seed surface and the heat stress produced by the seed contacting the Si melt. In order to prevent dislocation generation, it is necessary to reduce the distortion on the Si surface in addition to the heat stress.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-03-15