High-Capacitance Thin-Film Capacitors on a Polymer Film

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概要

• 論文の詳細を見る

• Pb(Zr,Ti)O3 (PZT) thin film has been crystallized at below 450°C by means of a sol–gel process that employs a PT-seeding method, and it has been used to fabricate a PZT thin-film capacitor on polyimide film at a high decomposition temperature. The capacitor structure includes a 4-layer bottom electrode: Pt(200 nm)/Ti(50 nm)/Mo(600 nm)/Ti(50 nm). Capacitance density is 12 nF/mm2 in the effective capacitance area. Despite the use of PZT, a high-k material, this thin-film capacitor still offers high insulation resistance (6.2 G$\Omega$ at 3 Vdc) and reliability sufficient for use as a decoupling capacitor.

• 2003-12-15

著者

• Yamamichi Shintaro

  Nec Jisso Research Laboratories

• Mori Toru

  NEC Jisso and Production Technologies Research Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Yamamichi Shintaro

  NEC Jisso research Laboratories, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 216-8555, Japan

• Shibuya Akinobu

  NEC Jisso research Laboratories, 4-1-1 Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 216-8555, Japan

関連論文

• High-Capacitance Thin-Film Capacitors on a Polymer Film
• Improved Reliability in Thin-Film Capacitors Fabricated with Mn-Doped Pb(Zr,Ti)O3 Annealed at Low Temperatures

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