Improved Reliability in Thin-Film Capacitors Fabricated with Mn-Doped Pb(Zr,Ti)O3 Annealed at Low Temperatures

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概要

• 論文の詳細を見る

• Mn-doped Pb(Zr,Ti)O3 (PMZT) thin film have been successfully crystallized in a sol–gel process at 440 °C, at which temperature polyimide film does not decompose. With a 6.8 V DC applied bias (272 kV/cm) in the effective capacitance area, capacitance density is 20 nF/mm2, and leakage current density is 0.2 μA/cm2. With a continuously applied 6.8 V DC bias, 0.2 mol % Mn-ion doping results in an increase from 4.0 to 12.5 years in the time to dielectric breakdown, as extrapolated to 85 °C, without degrading capacitance. Mn-doped Pb(Zr,Ti)O3 (PZT) thin-film capacitors on polymer film appear to offer capacitance and reliability that are both high enough for use as decoupling capacitors.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-09-30

著者

• Kakegawa Kazuyuki

  Faculty Of Engineering Chiba University

• Mori Toru

  NEC Jisso and Production Technologies Research Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan

• Kakegawa Kazuyuki

  Faculty of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

関連論文

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• High-Capacitance Thin-Film Capacitors on a Polymer Film
• Defect Ferroelectric-Material of Type Pb_Na_yTio_
• Improved Reliability in Thin-Film Capacitors Fabricated with Mn-Doped Pb(Zr,Ti)O3 Annealed at Low Temperatures
• Defect Ferroelectric-Material of Type Pb1-xNayTio3-x+(y/2)

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