Quantum Size Effects in Low-Temperature Growth of Pb Islands on Si(111)$7\times 7$ Surfaces
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概要
- 論文の詳細を見る
Flat-top Pb islands with critical and magic thickness have been observed in the Pb/Si(111)$7\times 7$ system at 200 K by scanning tunneling microscopy. The growth behavior, different from that in the Stranski-Krastanov mode, arises from a quantum size effect. Quantized states are detected in the current–voltage ($I$–$V$) spectra on the Pb islands of varying thickness. Our observation of asymmetrical and oscillatory relaxation in the island thickness reveals that the charge distribution of confined electrons can influence the interlayer spacing. A simple model based on the infinite potential well can explain well all of our results.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-06-30
著者
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Tsong Tien
Institute Of Physics Academia Sinica
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Su Wei-bin
Institute Of Physics Academia Sinica
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Chang Shih-hsin
Institute Of Physics Academia Sinica
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Chen Lih
Department Of Electrical Engineering National Cheng Kung University
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CHANG Chia-Seng
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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Tsong Tien
Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan, R.O.C.
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Su Wei-Bin
Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan, R.O.C.
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Chen Lih
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
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